Title :
A New Punchthrough Model for Short Channel MOSFET
Author :
Chen, D. ; Li, Z.
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing, China
Abstract :
After the source-drain punchthrough was considered detailly, a new set of analytical models for punchthrough voltage Vp were suggested, which are suitable to NMOSFET with uniformly doped substrate or channel ion-implanted substrate and PMOSFET with buried channel, as well as a high speed numerical simulation method was developed for autosearching of Vp. Excellent agreements were shown between the results of numerical simulation and analytical models.
Keywords :
Analytical models; Electrons; MOS devices; MOSFET circuits; Microelectronics; Niobium; Numerical simulation; Poisson equations; Silicon; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
