DocumentCode
514179
Title
The Impact of Different Hot-Carrier-Degradation Components on the Optimization of Submicron n-Channel LDD Transistors
Author
Biermans, P.T.J. ; Poorter, T. ; Merks-Eppingbroek, H.J.H.
Author_Institution
Philips Research Laboratories, PO Box 80,000, NL-5600 JA Eindhoven, The Netherlands
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Measuring ¿Ide /Ids for only a short time period to characterize the hot-carrier degradation of submicron LDD transistors can lead to erroneous predictions of the transistor lifetime. Evaluation of the degradation components ¿Rs ,-¿ß/ß, and ¿VT is proposed. A physical explanation for the origin of these components is provided together with their dependence on the n¿dose of the LDD region.
Keywords
Current measurement; Degradation; Guidelines; Hot carriers; Laboratories; MOSFETs; Resumes; Stress measurement; Time measurement; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437035
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