DocumentCode
514180
Title
MOSFET Gate Current Modelling using Monte-Carlo Method
Author
Voves, J. ; Vesely, J.
Author_Institution
The Czech Technical University of Prague, Faculty of Electrical Engineering, Suchbátarova 2, 166 27 Praha 6, Czechoslovakia
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The new technique for determining the probability of hot-electron travel through the gate oxide is presented. The technique is based on the Monte Carlo method and is used in MOSFET gate current modelling. The calculated values of gate current are compared with experimental results from direct measurements on MOSFET test chips.
Keywords
Current measurement; Degradation; Electrodes; Electron emission; Electron traps; MOSFET circuits; Probability; Semiconductor device measurement; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437036
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