DocumentCode
514181
Title
Annealing of Hot-Carrier-Induced MOSFET Degradation
Author
Mahnkopf, R. ; Przyrembel, G. ; Wagemann, H.G.
Author_Institution
Institut fÿr Werkstoffe der Elektrotechnik der Technischen Universitÿt Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The annealing of fixed oxide charge and interface states generated by hot-carrier stress is investigated in the temperature range of 100°C - 450°C. First order rate equations are given, which approximately describe two subsequent processes involved in the annealing and ending at neutralization. The related activation energies are determined. For comparison the annealing of synchrotron light induced damage is examined.
Keywords
Annealing; Degradation; Hot carriers; Interface states; MOSFET circuits; Stress; Synchrotrons; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437039
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