• DocumentCode
    51509
  • Title

    Efficiency Study of a 2.2 kV, 1 ns, 1 MHz Pulsed Power Generator Based on a Drift-Step-Recovery Diode

  • Author

    Merensky, Lev M. ; Kardo-Sysoev, Alexei F. ; Shmilovitz, D. ; Kesar, Amit S.

  • Author_Institution
    Appl. Phys. Div., Soreq Nucl. Res. Center, Yavne, Israel
  • Volume
    41
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    3138
  • Lastpage
    3142
  • Abstract
    Drift-step-recovery diodes (DSRDs) are used in pulsed-power generators to produce nanosecond-scale pulses with a rise rate of the order of 1 kV/ns. A 2.2 kV, 1 ns pulsed power circuit is presented. The circuit features a single prime switch that utilizes a low-voltage dc power supply to pump and pulse the DSRD in the forward and reverse directions. An additional low-current dc power supply is used to provide a voltage bias in order to balance the DSRD forward with respect to its reverse charge. The DSRD was connected in parallel to the load. In order to study the circuit´s efficiency, it was operated over a wide range of operating parameters, including the main and bias source voltages, and the trigger duration of the prime switch. A peak voltage of 2.2 kV with a rise time of less than 1 ns and a rise rate of 3 kV/ns was obtained, where the efficiency was 24%. A higher efficiency of 52% was obtained when the circuit was optimized to an output peak voltage of 1.15 kV. The circuit was operated in single-shot mode as well as in bursts of up to 100 pulses at a repetition rate of 1 MHz. The experimental results are supported by a PSPICE simulation of the circuit. An analysis of the circuit input and output energies with respect to the MOSFET and DSRD losses is provided.
  • Keywords
    circuit simulation; power MOSFET; power semiconductor diodes; power semiconductor switches; pulse generators; pulsed power supplies; DSRD; DSRD loss; MOSFET; drift-step-recovery diode; frequency 1 MHz; low-current dc power supply; low-voltage dc power supply; power semiconductor diode switch; pulsed power circuit; pulsed power generator; time 1 ns; voltage 2.2 kV; voltage bias; Generators; Integrated circuit modeling; Load modeling; MOSFET; Semiconductor diodes; Switching circuits; Voltage measurement; Circuit simulation; drift-step recovery diode; power semiconductor diode switches; pulse generation;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2013.2284601
  • Filename
    6633007