DocumentCode :
51509
Title :
Efficiency Study of a 2.2 kV, 1 ns, 1 MHz Pulsed Power Generator Based on a Drift-Step-Recovery Diode
Author :
Merensky, Lev M. ; Kardo-Sysoev, Alexei F. ; Shmilovitz, D. ; Kesar, Amit S.
Author_Institution :
Appl. Phys. Div., Soreq Nucl. Res. Center, Yavne, Israel
Volume :
41
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
3138
Lastpage :
3142
Abstract :
Drift-step-recovery diodes (DSRDs) are used in pulsed-power generators to produce nanosecond-scale pulses with a rise rate of the order of 1 kV/ns. A 2.2 kV, 1 ns pulsed power circuit is presented. The circuit features a single prime switch that utilizes a low-voltage dc power supply to pump and pulse the DSRD in the forward and reverse directions. An additional low-current dc power supply is used to provide a voltage bias in order to balance the DSRD forward with respect to its reverse charge. The DSRD was connected in parallel to the load. In order to study the circuit´s efficiency, it was operated over a wide range of operating parameters, including the main and bias source voltages, and the trigger duration of the prime switch. A peak voltage of 2.2 kV with a rise time of less than 1 ns and a rise rate of 3 kV/ns was obtained, where the efficiency was 24%. A higher efficiency of 52% was obtained when the circuit was optimized to an output peak voltage of 1.15 kV. The circuit was operated in single-shot mode as well as in bursts of up to 100 pulses at a repetition rate of 1 MHz. The experimental results are supported by a PSPICE simulation of the circuit. An analysis of the circuit input and output energies with respect to the MOSFET and DSRD losses is provided.
Keywords :
circuit simulation; power MOSFET; power semiconductor diodes; power semiconductor switches; pulse generators; pulsed power supplies; DSRD; DSRD loss; MOSFET; drift-step-recovery diode; frequency 1 MHz; low-current dc power supply; low-voltage dc power supply; power semiconductor diode switch; pulsed power circuit; pulsed power generator; time 1 ns; voltage 2.2 kV; voltage bias; Generators; Integrated circuit modeling; Load modeling; MOSFET; Semiconductor diodes; Switching circuits; Voltage measurement; Circuit simulation; drift-step recovery diode; power semiconductor diode switches; pulse generation;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2013.2284601
Filename :
6633007
Link To Document :
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