Title :
The development of the 1.27 μm high responsivity AlInAs avalanche photodiodes for 10G-EPON (OLT)
Author :
Sasahata, Y. ; Nakaji, M. ; Aoyagi, T. ; Ishikawa, T.
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical communication equipment; optical fibre LAN; 10G-EPON; AlInAs; Ethernet passive optical network; avalanche photodiodes; bandwidth 8.3 GHz; multiplication factor; optical line terminal; wavelength 1.27 mum; Absorption; Avalanche photodiodes; Bandwidth; Distributed Bragg reflectors; Indium gallium arsenide; Indium phosphide; Optical receivers; Optical sensors; Passive optical networks; Reflectivity;
Conference_Titel :
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Conference_Location :
San Diego, CA
Electronic_ISBN :
978-1-55752-884-1
