DocumentCode :
515963
Title :
Effects of nonlinear losses and design geometry on gain in silicon waveguides with erbium doped regions
Author :
Qian, Feng ; Song, Qi ; Tien, En-Kuang ; Boyraz, Ozdal
Author_Institution :
EECS Dept., Univ. of California, Irvine, CA, USA
fYear :
2010
fDate :
21-25 March 2010
Firstpage :
1
Lastpage :
3
Abstract :
We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.
Keywords :
elemental semiconductors; erbium; excited states; integrated optics; nonlinear optics; optical design techniques; optical losses; optical waveguides; silicon; Si:Er; design geometry; erbium doped regions; excited state absorptions; multitrench designs; nonlinear losses; optical gain; silicon waveguides; Erbium; Geometry; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Conference_Location :
San Diego, CA
Electronic_ISBN :
978-1-55752-884-1
Type :
conf
Filename :
5465676
Link To Document :
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