DocumentCode
515963
Title
Effects of nonlinear losses and design geometry on gain in silicon waveguides with erbium doped regions
Author
Qian, Feng ; Song, Qi ; Tien, En-Kuang ; Boyraz, Ozdal
Author_Institution
EECS Dept., Univ. of California, Irvine, CA, USA
fYear
2010
fDate
21-25 March 2010
Firstpage
1
Lastpage
3
Abstract
We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.
Keywords
elemental semiconductors; erbium; excited states; integrated optics; nonlinear optics; optical design techniques; optical losses; optical waveguides; silicon; Si:Er; design geometry; erbium doped regions; excited state absorptions; multitrench designs; nonlinear losses; optical gain; silicon waveguides; Erbium; Geometry; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Conference_Location
San Diego, CA
Electronic_ISBN
978-1-55752-884-1
Type
conf
Filename
5465676
Link To Document