• DocumentCode
    516248
  • Title

    A Monolithic Impedance Buffer, with a Compatible JFET-CMOS Technology

  • Author

    Sansen, W. ; Das, C. ; Callewaert, L.

  • Author_Institution
    Kath. Univ. Leuven, Elektrotechniek, 94 K. Mercierlaan, 3030 Heverlee
  • fYear
    1984
  • fDate
    0-0 Sept. 1984
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    An integrated impedance buffer for microelectrodes has been designed. The circuit exhibits a low input capacitance (0.2 pF), a high driving capability and a low power consumption (750 ¿W). The circuit has been implemented in a 5 ¿m p-well CMOS technology with double implanted p-JFET-transistors for low noise performance (90 nV/VHz at 10 Hz).
  • Keywords
    Bonding; CMOS technology; Capacitance; Circuit noise; Energy consumption; Impedance; Integrated circuit technology; MOSFETs; Microelectrodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1984. ESSCIRC '84. Tenth European
  • Conference_Location
    Edinburgh, UK
  • Type

    conf

  • Filename
    5467841