Title :
A Highly Flexible ROM Generator for BiCMOS Technology
Author :
Schardein, W. ; Wittmann, R. ; Hosticka, B. ; Eber, W. ; Weghaus, B.
Author_Institution :
Fraunhofer Institute of Microelectronic Circuits and Systems, Finkenstr. 61, D-4100 Duisburg 1, Germany
Abstract :
This paper describes a highly flexible design rule independent ROM generator for BiCMOS technology with full CAD support for compilation, verification, simulation, and documentation. The flexibility is mainly achieved by a quantization of the memory space by steps of only one word and by the option of an arbitrary aspect ratio of the ROM matrix. Special BiCMOS circuits have been developed for speed optimization and integrated in the CAD tool. An overview on the design flow is given.
Keywords :
BiCMOS integrated circuits; CMOS technology; Decoding; Delay; Design automation; MOS devices; Read only memory; Space technology; Transconductance; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1991. ESSCIRC '91. Proceedings - Seventeenth European
Conference_Location :
Milan, Italy
