• DocumentCode
    516301
  • Title

    A 256K NMOS EPROM

  • Author

    De Subercasaux, Ch ; Gilles, J.

  • Author_Institution
    THOMSON SEMICONDUCTORS/EUROTECHNIQUE, B.P. 2 - 13790 ROUSSET - FRANCE
  • fYear
    1984
  • fDate
    0-0 Sept. 1984
  • Firstpage
    140
  • Lastpage
    143
  • Abstract
    A 256K EPROM will be described. This memory achieves a typical access time of 150 ns. It is fabricated with a 2 ¿m double polysilicon E/D NMOS technology. The cell size is 45,5 ¿m2. The chip size is 24 mm2, including 4 redundant rows. The majors features are a simplified process and a dynamic decoder, using an address transition detector circuit.
  • Keywords
    Circuits; Clocks; Decoding; EPROM; Energy consumption; Etching; MOS devices; Regulators; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1984. ESSCIRC '84. Tenth European
  • Conference_Location
    Edinburgh, UK
  • Type

    conf

  • Filename
    5467905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516301