DocumentCode
516318
Title
10 Gbit/s Silicon Bipolar Laser Driver IC
Author
Derksen, Rainer H. ; Wernz, Horst
Author_Institution
ANT Nachrichtentechnik GmbH, Abt. EVO35, Gerberstr. 33, D-W7150 Backnang, Germany
Volume
1
fYear
1993
fDate
22-24 Sept. 1993
Firstpage
146
Lastpage
149
Abstract
A 10 Gbit/s silicon bipolar laser driver IC for direct modulation of a laser diode has been developed and fabricated. The adjustable modulation current range is 15 mA - 45 mA. The IC can drive 25 ¿-laser modules via a 25 ¿-line. Typical power dissipation is 1.2 W for a modulation current of 45 mA. The IC is one of the fastest laser driver ICs in silicon. In contrast to most previous works in this field, not only the capability to drive an ohmic load is shown, but also the performance in the case of driving a real laser module.
Keywords
Bipolar integrated circuits; Current measurement; Design optimization; Diode lasers; Mirrors; Power dissipation; Resistors; Silicon; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European
Conference_Location
Sevilla, Spain
Print_ISBN
2-86335-134-X
Type
conf
Filename
5467922
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