• DocumentCode
    516336
  • Title

    High Speed GaAs IC´s Design using BDCFL Logic

  • Author

    Bedouani, Mohamed ; Leber, Jacques ; Vilela, Antonio

  • Author_Institution
    Bull Corporate Research Center, Rue Jean Jaurÿs - 78340 - Les Clayes sous Bois - France
  • Volume
    1
  • fYear
    1993
  • fDate
    22-24 Sept. 1993
  • Firstpage
    102
  • Lastpage
    105
  • Abstract
    High speed and large scale system applications are requiring greater speed and integration with very low power dissipation. In order to meet such needs, GaAs Buffered Direct Coupled Fet Logic (BDCFL) was used for IC´s design. The BDCFL basic cell, equivalent to an inverter, consists of two pairs of two enhancement and depletion mode MESFET. This logic, derived from DCFL family, is characterized by low component count for a given logic function and requires only single power supply. We present here a design methodology used for high speed digital circuits where the product Pwd.¿pd was well optimized (Pwd is the power dissipation, ¿pd is the propagation delay). The application of this methodology allows the design of fast communication integrated circuits. Performances of two circuits used in multi-gigabit per second applications are described and Comparison of DCFL and BDCFL exclusive-or results are also presented.
  • Keywords
    Design methodology; FET integrated circuits; Gallium arsenide; High speed integrated circuits; Inverters; Large-scale systems; Logic design; Logic functions; MESFETs; Power dissipation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European
  • Conference_Location
    Sevilla, Spain
  • Print_ISBN
    2-86335-134-X
  • Type

    conf

  • Filename
    5467941