DocumentCode :
516413
Title :
A High Density Bipolar Static Memory Cell for 256K and Beyond
Author :
Fitzgerald, Brian F. ; El-Kareh, Badih ; Garnache, Richard R. ; Lane, Paul K.
Author_Institution :
IBM General Technology Division, Essex Junction, VT 05452. Telephone: (802) 769-6254
fYear :
1985
fDate :
16-18 Sept. 1985
Firstpage :
131
Lastpage :
138
Abstract :
Using an advanced bipolar trench technology, a high density I2L type memory cell has been fabricated in a 1K static RAM test vehicle. By maximizing the utility of the trench, the 1K RAM contains a cell with high density and large signal for extension to 256K.
Keywords :
Doping; FETs; Isolation technology; Logic testing; Rails; Random access memory; Read-write memory; Stability; Telephony; Vehicles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1985. ESSCIRC '85. 11th European
Conference_Location :
Toulouse, France
Type :
conf
Filename :
5468040
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=516413
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