DocumentCode :
516436
Title :
Novel High Performance Complementary CAM/RAM Circuits
Author :
Haraszti, T.P.
Author_Institution :
Microcirc Associates, Newport Beach, California, U.S.A.
fYear :
1985
fDate :
16-18 Sept. 1985
Firstpage :
237
Lastpage :
240
Abstract :
Novel complementary CAM/RAM circuits feature very short access time (3.4 nsec), high density (6 and 8 minimum size device/cell) and radiation hardness (1 × 106 rad (Si)) in a hierarchical organization of 4k bit memory modules. The design utilizes innovative static memory cells and operating scheme, optimized fault-tolerant modular architecture and 1.25-2¿m advanced CMOS VLSI process.
Keywords :
CADCAM; Circuits; Computer aided manufacturing; Fault tolerance; Random access memory; Read-write memory; Temperature sensors; Threshold voltage; Very large scale integration; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1985. ESSCIRC '85. 11th European
Conference_Location :
Toulouse, France
Type :
conf
Filename :
5468089
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=516436
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