Title :
Soft Errors in Static NMOS RAMs
Author :
Carter, P.M. ; Wilkins, B.R.
Author_Institution :
Department of Electronics and Information Engineering, Southampton University, Southampton, SO9 5NH
Abstract :
Soft error rates in static RAMs have been measured, and shown to be comparable to those of DRAMs under typical operating conditions. Ways of reducing the alpha-sensitivity have been assessed both by analysis of a simplified model of the SRAM cell, and by SPICE simulations.
Keywords :
Alpha particles; Circuit simulation; Error analysis; MOS devices; Manufacturing; Particle measurements; Random access memory; SPICE; Testing; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European
Conference_Location :
Delft, The Netherlands
