Title :
Matching properties of MOS transistors
Author :
Pelgrom, Marcel J M ; Duinmaijer, Aad C.J.
Author_Institution :
Philips Research Laboratories, Eindhoven, the Netherlands.
Abstract :
The matching properties of the threshold voltage, substrate factor and current factor of MOS transistors have been analysed and measured. Improvements of the existing theory are given, as well as extensions for long distance matching and rotation of devices. The matching results have been verified by measurements and calculations on a band-gap reference circuit.
Keywords :
Analysis of variance; Circuits; Current measurement; Digital-analog conversion; Equations; Laboratories; MOSFETs; Photonic band gap; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
