• DocumentCode
    516498
  • Title

    Performance Enhancement of Compatible Lateral Bipolar Transistors for High-Precision CMOS Analog Design

  • Author

    Arreguit, X. ; Vittoz, E.A.

  • Author_Institution
    ECOLE POLYTECHNIQUE FEDERALE ELECTRONICS LABORATORIES, LEG/EL-ECUBLENS, CH-1015 LAUSANNE
  • fYear
    1988
  • fDate
    21-23 Sept. 1988
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    The residual gate effect on the lateral collector current of compatible lateral bipolar transistors is modelled and a novel method for biasing the gate is presented. It is shown that this effect can be used to compensate transistors mismatch in order to enhance the precision of analog CMOS circuits by a factor of 5-10 over a temperature range of 100°K.
  • Keywords
    Analog circuits; Bipolar transistors; CMOS analog integrated circuits; CMOS technology; Nonvolatile memory; Semiconductor device modeling; Temperature distribution; Temperature sensors; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
  • Conference_Location
    Manchester, UK
  • Type

    conf

  • Filename
    5468282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516498