Title :
A 4Gbits/sec GaAs BFL MESFET 4:1 Multiplexer
Author :
Eddison, C.G. ; Mudd, M. ; Warner, D.J. ; Parker, D.
Author_Institution :
Plessey Research Caswell Ltd., Allen Clark Research Centre, Caswell, Towcester, Northants. UK.
Abstract :
We have designed and fabricated a GaAs buffered FET logic (BFL) 4:1 multiplexer using 0.7¿m gate length ion implanted MESFETs and Schottky diodes. The circuit, which exhibited excellent yields (62%), operated up to 4.1GBits/sec, with a DC power dissipation of 1.65Watts. The IC had 134 FETs, with a total gate periphery of 4.9mm, and 86 (6100¿m2) level shift diodes. In addition, 250pF of decoupling capacitance was provided on the 2.3mm × 2.0mm chip. The circuit formed one half of a multiplexer/demultiplexer demonstrator chip set, and was the first GaAs MESFET MSI circuit produced on our foundry process.
Keywords :
Circuit testing; Clocks; Delay; FETs; Foundries; Gallium arsenide; MESFET circuits; Metallization; Multiplexing; Schottky diodes;
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
