Title :
Six Most CAM Cell For High Density Array
Author_Institution :
GMD/EIS. Postfach 1240, D-5205 St. Augustin 1, West Germany.; A visiting scholar from Microelectronics Center, Academia Sinica, Beijing, China.
Abstract :
A new CAM cell has been presented. The cell consists of only 6 MOS transistors and the size of it can be comparable to full CMOS SRAM cell. It can work either statically or dynamically. Hence, it provides a possibility to develop high density CAM chip.
Keywords :
CADCAM; CMOS process; CMOS technology; Charge transfer; Computer aided manufacturing; Diodes; MOSFETs; Microelectronics; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
