• DocumentCode
    516744
  • Title

    The Impact of Transistor Sizing on Power Efficiency in Submicron CMOS Circuits

  • Author

    Rogenmoser, Robert ; Kaeslin, Hubert ; Felber, Norbert

  • Author_Institution
    Integrated Systems Laboratory, Swiss Federal Institute of Technology, CH-8092 Zÿrich, Switzerland
  • fYear
    1996
  • fDate
    17-19 Sept. 1996
  • Firstpage
    124
  • Lastpage
    127
  • Abstract
    Transistor size optimization is one method to reduce the power dissipation of CMOS VLSI circuits. Analysis shows that parasitic capacitances and velocity saturation of submicron technologies favor wider than minimum transistor sizes. The reason is that they allow for a larger reduction of the supply voltage which results in more substantial power savings. Spice simulation of prescalers with differently scaled transistors confirm the analysis. The same prescaler has been implemented in a 1.0 ¿m technology with minimum sized and with optimized transistors for high speed. Measurements confirm that power dissipation is reduced for optimized transistor sizes.
  • Keywords
    Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Optimization methods; Parasitic capacitance; Power dissipation; Power measurement; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
  • Conference_Location
    Neuchatel, Switzerland
  • Print_ISBN
    2-86332-197-8
  • Type

    conf

  • Filename
    5468607