DocumentCode
516744
Title
The Impact of Transistor Sizing on Power Efficiency in Submicron CMOS Circuits
Author
Rogenmoser, Robert ; Kaeslin, Hubert ; Felber, Norbert
Author_Institution
Integrated Systems Laboratory, Swiss Federal Institute of Technology, CH-8092 Zÿrich, Switzerland
fYear
1996
fDate
17-19 Sept. 1996
Firstpage
124
Lastpage
127
Abstract
Transistor size optimization is one method to reduce the power dissipation of CMOS VLSI circuits. Analysis shows that parasitic capacitances and velocity saturation of submicron technologies favor wider than minimum transistor sizes. The reason is that they allow for a larger reduction of the supply voltage which results in more substantial power savings. Spice simulation of prescalers with differently scaled transistors confirm the analysis. The same prescaler has been implemented in a 1.0 ¿m technology with minimum sized and with optimized transistors for high speed. Measurements confirm that power dissipation is reduced for optimized transistor sizes.
Keywords
Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Optimization methods; Parasitic capacitance; Power dissipation; Power measurement; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location
Neuchatel, Switzerland
Print_ISBN
2-86332-197-8
Type
conf
Filename
5468607
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