DocumentCode :
516744
Title :
The Impact of Transistor Sizing on Power Efficiency in Submicron CMOS Circuits
Author :
Rogenmoser, Robert ; Kaeslin, Hubert ; Felber, Norbert
Author_Institution :
Integrated Systems Laboratory, Swiss Federal Institute of Technology, CH-8092 Zÿrich, Switzerland
fYear :
1996
fDate :
17-19 Sept. 1996
Firstpage :
124
Lastpage :
127
Abstract :
Transistor size optimization is one method to reduce the power dissipation of CMOS VLSI circuits. Analysis shows that parasitic capacitances and velocity saturation of submicron technologies favor wider than minimum transistor sizes. The reason is that they allow for a larger reduction of the supply voltage which results in more substantial power savings. Spice simulation of prescalers with differently scaled transistors confirm the analysis. The same prescaler has been implemented in a 1.0 ¿m technology with minimum sized and with optimized transistors for high speed. Measurements confirm that power dissipation is reduced for optimized transistor sizes.
Keywords :
Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Optimization methods; Parasitic capacitance; Power dissipation; Power measurement; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location :
Neuchatel, Switzerland
Print_ISBN :
2-86332-197-8
Type :
conf
Filename :
5468607
Link To Document :
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