Title :
CMOS/SIMOX-RF-Frontend for 1.7GHz
Author :
Eggert, D. ; Budde, W.
Author_Institution :
Fraunhofer-Institute of Microelectronic Circuits and Systems, IMS-2 Dresden, Grenzstr. 28; D-01109 Dresden
Abstract :
The cointegration of high-speed NMOS devices and inductive elements by means of a SIMOX-technology with high-resistive substrates enables operating frequencies which meet the needs of modern communication systems. This paper describes a RF frontend operating in the frequency range 1.4 to 1.9GHz. The performance of the presented circuit proves the capability of this technology to realize complete RF-systems on a single chip.
Keywords :
CMOS technology; Capacitors; Circuits; Dielectric substrates; Dielectric thin films; Impedance matching; Inductors; Radio frequency; Silicon on insulator technology; Thin film transistors;
Conference_Titel :
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location :
Neuchatel, Switzerland
Print_ISBN :
2-86332-197-8
