DocumentCode
516787
Title
Novel Dual Rail High Voltage Generators for Embedded Flash Memories
Author
Cho, Kyoung-Rok ; Wang, Jong-Hyun
Author_Institution
Dept. of Computer & Communication Eng., Chungbuk Nat´´l Univ, San-48 Gaeshin-dong Heungduk-ku Cheongju City, 790-330, Korea. e-mail: krcho@cbucc.chungbuk.ac.kr
fYear
1996
fDate
17-19 Sept. 1996
Firstpage
296
Lastpage
299
Abstract
Novel high voltage generator for embedded flash memories are presented, employing dual rail architecture. Two cross-coupled charge transfer paths are employed in this circuit to reduce capacitance sizes and to achieve faster rising time. This generator produces a high voltage above 20V within 9¿s using a 2V external power supply, which provides faster high voltage response than conventional methods and yields a high circuit density.
Keywords
Charge pumps; Charge transfer; Circuits; Clocks; Flash memory; MOSFETs; Power generation; Power supplies; Rails; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location
Neuchatel, Switzerland
Print_ISBN
2-86332-197-8
Type
conf
Filename
5468650
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