DocumentCode
516815
Title
Potential and design of MOSFET-C continuous-time filters in SOI technology
Author
Dessard, V. ; Gentinne, B. ; Flandre, D.
Author_Institution
Laboratoire de microélectronique, Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium. E-mail: dessard@dice.ucl.ac.be
fYear
1996
fDate
17-19 Sept. 1996
Firstpage
416
Lastpage
419
Abstract
A study of the implementation of integrated MOSFET-C continuous-time filters in SOI technology is presented. A detailed comparison of both the bulk and SOI linearity performances of two- or four-transistor balanced structures is given and provides the experimental demonstration of the superiority of the four-MOSFET over two-MOSFET structures as well as of SOI over bulk. Furthermore, to keep a good filter linearity, the use of a simple OTA-like amplifier is also discussed. Design and measurement of a complete MOSFET-C SOI CMOS audio-equalizer is finally reported.
Keywords
CMOS technology; Distortion measurement; Filters; Immune system; Linearity; MOSFET circuits; Operational amplifiers; Resistors; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location
Neuchatel, Switzerland
Print_ISBN
2-86332-197-8
Type
conf
Filename
5468680
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