• DocumentCode
    516863
  • Title

    Design Constraints for NMOS VLSIs Due to Substrate Current

  • Author

    Guggenmos, X. ; Horninger, K.

  • Author_Institution
    Techn. Univ. Munchen, Munich, Germany
  • fYear
    1982
  • fDate
    22-24 Sept. 1982
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    Channel carriers in MOMOSFETSFETs accelerated by high drain fields can generate electron hole pairs which are detected by measuring the substrate current. In switching operation the maximum substrate current only flows during a short time. Results of static and dynamic measurements and a model for circuit simulators (e.g. SPICE) are presented.
  • Keywords
    MOSFET; VLSI; semiconductor device measurement; MOSFET; NMOS VLSI; circuit simulators; design constraints; dynamic measurements; electron hole pairs; high drain fields; maximum substrate current; static measurement; substrate current; Circuit simulation; Current measurement; Frequency; Impact ionization; Inverters; MOS devices; MOSFETs; SPICE; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1982. ESSCIRC '82. Eighth European
  • Conference_Location
    Brussels
  • Type

    conf

  • Filename
    5468866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516863