Title :
Designfeatures of a 5V Only 64K-Dynamic MOS RAM
Author_Institution :
Component Div, Siemens AG, Munich, Germany
Abstract :
A single supply, 5 Volt 64k-bit dynamic MOS random access memory chip using some new design features such as boostet wordlines, quiet wordline flip-flops, active restore circuits, substrat bias equalization circuit etc. will be presented.
Keywords :
MOS memory circuits; logic design; random-access storage; MOS RAM; active restore circuits; boostet wordlines; dynamic MOS random access memory chip; quiet wordline flip-flops; storage capacity 64 Kbit; substrat bias equalization circuit; voltage 5 V; Aluminum; Ceramics; Chip scale packaging; Circuits; Plastic packaging; Power amplifiers; Random access memory; Read-write memory; Variable structure systems; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1982. ESSCIRC '82. Eighth European
Conference_Location :
Brussels
