DocumentCode :
516904
Title :
A 1.5 nsec 1K Bit Bipolar RAM
Author :
Yamamoto, Yousuke ; Miyanaga, Hiroshi ; Sakai, Tetsushi
Author_Institution :
Atsugi Electrical Communication Laboratory, NTT., 1839 Ono, Atsugi-shi, Kanagawa, 243-01 JAPAN
fYear :
1983
fDate :
21-23 Sept. 1983
Firstpage :
93
Lastpage :
96
Abstract :
A 1K bit bipolar static RAM with 1.5 nsec access time has been realized using novel circuits and super self aligned technonogy of the high performance bipolar process. These novel circuits, consisting of a fast decoder buffer, a cell circuit and a sense amplifier, lead to two times faster access time than that of conventional RAMs.
Keywords :
Capacitance; Circuit synthesis; Decoding; Gallium arsenide; Laboratories; Operational amplifiers; Random access memory; Read-write memory; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1983. ESSCIRC '83. Ninth European
Conference_Location :
Lausanne, Switzerland
Print_ISBN :
2-88074-021-5
Type :
conf
Filename :
5468912
Link To Document :
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