DocumentCode
516918
Title
Signal Processing of Infrared Detectors with CCD´s
Author
Félix, P. ; Portmann, J. ; Munier, B. ; Reboul, J.P.
Author_Institution
THOMSON-CSF, Electron Tube Division, Paris, France
fYear
1979
fDate
18-21 Sept. 1979
Firstpage
126
Lastpage
130
Abstract
Because of its low-noise capability, high dynamic range and low power consumption, the CCD appears to be a potentially very useful tool for signal processing of linear and two-dimensional focal-plane arrays of infrared detectors. The signal processing operations include time delay and integration (TDI), multiplexing and filtering. We discuss in this paper the critical parameters of the detector-to-CCD coupling and the related limitations for the various kinds of thermal imaging scanners. Some of these parameters have been measured at 300 K and 77 K, especially the CCD´s input transconductance, the input MOSFET coupling noise, the transfer noise in the CCD channel, and the threshold voltage dispersion. We also give some experimental results on the direct-injection coupling of a Pb0,80 Sn0,20 Te photovoltaÃc detector array at 77 K to a silicon CCD multiplexer specially designed for the readout of infrared detectors. At present the 2.1010 W-1 cmHz1/2 measured equivalent detectivity is limited by the coupling noise in the channel of each input MOSFET. A 5.1010 W-1 cmHz1/2 equivalent detectivity is expected with 8 - 12 ¿m detectors operated at 60 K.
Keywords
Array signal processing; Charge coupled devices; Delay effects; Dynamic range; Energy consumption; Infrared detectors; MOSFET circuits; Noise measurement; Sensor arrays; Signal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location
Southampton, UK
Print_ISBN
0-85296-208-8
Type
conf
Filename
5468932
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