DocumentCode :
516923
Title :
One-Device Cells for Dynamic Random-Access Memories
Author :
Rideout, V. Leo
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
fYear :
1979
fDate :
18-21 Sept. 1979
Firstpage :
99
Lastpage :
101
Keywords :
Capacitance; Capacitors; DRAM chips; Dielectrics and electrical insulation; FET integrated circuits; Image storage; Integrated circuit layout; MOSFET circuits; Random access memory; Read-write memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location :
Southampton, UK
Print_ISBN :
0-85296-208-8
Type :
conf
Filename :
5468937
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=516923
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