Title :
First-Order Modeling and Temperature Behaviour of Standard ISL-Gates
Author :
Lohstroh, J. ; van den Crommenacker, J.D.P.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
A simple first-order model for standard ISL-gates is introduced. It shows the behaviour of the gates reasonably, also at higher temperatures. The simulation results correspond very well with the measured results.
Keywords :
Capacitance; Computational modeling; Curve fitting; Delay effects; Electronics packaging; Inverse problems; Laboratories; Logic; Schottky diodes; Temperature dependence;
Conference_Titel :
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location :
Southampton, UK
Print_ISBN :
0-85296-208-8
