DocumentCode
516973
Title
Improvement of the Testability of LSI Circuits
Author
Crouzet, Y. ; Galiay, J. ; Rousseau, P. ; Vergniault, M.
Author_Institution
L.A.A.S., C.N.R.S., Toulouse, France
fYear
1978
fDate
18-21 Sept. 1978
Firstpage
173
Lastpage
176
Abstract
The results presented in this paper form the first part of a R&D program devoted to out-line and in-line testing of LSI integrated circuits. This paper is mainly concerned with the testability of single channel MOS IC. The first part is devoted to the definition of basic assumptions related to the physical origin of failures ; these assumptions have been made taking into account 1) a theoretical evaluation of the quality of the technological process and 2) a direct inspection of a set of failed circuits chosen for their representativeness of the state of the art. The second part presents some design rules enabling the improvement of IC testability ; these rules, which are applicable during the IC implementation, tend to diminish the number of possible failures and also to facilitate the test sequence generation for the remaining failures.
Keywords
MOS integrated circuits; integrated circuit testing; large scale integration; LSI circuit testability; LSI integrated circuit; in-line testing; out-line testing; single channel MOS IC; Circuit testing; Electric breakdown; Insulation; Integrated circuit modeling; Integrated circuit testing; Large scale integration; Manufacturing processes; Metallization; Pollution; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location
Amsterdam
Type
conf
Filename
5469006
Link To Document