• DocumentCode
    516987
  • Title

    The Multidrain MOS Transistor

  • Author

    Majos, J. ; Lardy, J.L.

  • Author_Institution
    Centre Nat. d´´Etudes des Telecommun., Lannion, France
  • fYear
    1978
  • fDate
    18-21 Sept. 1978
  • Firstpage
    133
  • Lastpage
    135
  • Abstract
    The multidrain MOS transistor (MD-MOS) improves speed and packing density of the monolithic integrated circuits in the standard N-MOS silicon gate enhancement-depletion technology. In addition, with its modular structure, the MD-MOS gate allows a fast design-to-implementation turraround using symbolic modeIs.
  • Keywords
    MOS integrated circuits; MOSFET; integrated circuit design; monolithic integrated circuits; MD-MOS; N-MOS silicon gate enhancement-depletion technology; modular structure; monolithic integrated circuit; multidrain MOS transistor; packing density; speed; Capacitance; Clocks; Driver circuits; Flip-flops; Frequency; Joining processes; Libraries; Logic gates; MOSFETs; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
  • Conference_Location
    Amsterdam
  • Type

    conf

  • Filename
    5469020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516987