Title :
Charge-Pumping-Loop Concept for Static MOS-RAM Cells
Author :
Cilingiroglu, U.
Author_Institution :
Elektrik Fak., Istanbul Teknik Univ., Istanbul, Turkey
Abstract :
In this work we searched for such a configuration and arrived at a novel static MOS-RAM concept based on the inverting ability of the charge-pump. The concept and the proposed cell configurations will be considered in some detail after a brief review of the charge-pump. Lastly the experimental work will be presented.
Keywords :
MOS integrated circuits; SRAM chips; charge pump circuits; charge pump; loop concept; static MOS RAM cells; Charge pumps; Circuits; Flip-flops; Leakage current; Power dissipation; Semiconductor diodes; Stress; Substrates; Technological innovation; Threshold voltage;
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam
