• DocumentCode
    516998
  • Title

    Charge-Pumping-Loop Concept for Static MOS-RAM Cells

  • Author

    Cilingiroglu, U.

  • Author_Institution
    Elektrik Fak., Istanbul Teknik Univ., Istanbul, Turkey
  • fYear
    1978
  • fDate
    18-21 Sept. 1978
  • Firstpage
    106
  • Lastpage
    109
  • Abstract
    In this work we searched for such a configuration and arrived at a novel static MOS-RAM concept based on the inverting ability of the charge-pump. The concept and the proposed cell configurations will be considered in some detail after a brief review of the charge-pump. Lastly the experimental work will be presented.
  • Keywords
    MOS integrated circuits; SRAM chips; charge pump circuits; charge pump; loop concept; static MOS RAM cells; Charge pumps; Circuits; Flip-flops; Leakage current; Power dissipation; Semiconductor diodes; Stress; Substrates; Technological innovation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
  • Conference_Location
    Amsterdam
  • Type

    conf

  • Filename
    5469031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516998