Title :
A Complementary MOS Gyrator
Author_Institution :
Inst. fur Phys. Elektron., Tech. Univ. Wien, Vienna, Austria
Abstract :
An integrated CMOS gyrator is described offering high Q limited only by the chip area used. The transconductance of the experimental circuit which features a Q of over 1000 may be controlled by an external voltage.
Keywords :
CMOS integrated circuits; gyrators; chip area; complementary MOS gyrator; integrated CMOS gyrator; transconductance; Circuits; Differential amplifiers; FETs; Gyrators; Impedance; MOSFETs; Power amplifiers; Resistors; Transconductance; Voltage control;
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam
