Title :
C A D Models of MOSFET Transistors and their Parameter Acquisition on an Automatic System
Author :
Baylac, B. ; Merckel, G.
Author_Institution :
LETI/MEA, CEA, Grenoble, France
Abstract :
We present a parameter automatic acquisition system (S I A M) applied to C A D models of MOSFET transistors. The results are obtained on P channel and N channel, SOS and bulk devices.
Keywords :
MOSFET; circuit CAD; semiconductor device models; CAD model; MOSFET transistor; N channel; P channel; SOS device; automatic system; bulk device; parameter acquisition; Aluminum; Automatic testing; Bridge circuits; Capacitance measurement; Current measurement; MOSFET circuits; Memory; Statistics; System testing; Voltage;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
