• DocumentCode
    517037
  • Title

    C A D Models of MOSFET Transistors and their Parameter Acquisition on an Automatic System

  • Author

    Baylac, B. ; Merckel, G.

  • Author_Institution
    LETI/MEA, CEA, Grenoble, France
  • fYear
    1976
  • fDate
    21-24 Sept. 1976
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    We present a parameter automatic acquisition system (S I A M) applied to C A D models of MOSFET transistors. The results are obtained on P channel and N channel, SOS and bulk devices.
  • Keywords
    MOSFET; circuit CAD; semiconductor device models; CAD model; MOSFET transistor; N channel; P channel; SOS device; automatic system; bulk device; parameter acquisition; Aluminum; Automatic testing; Bridge circuits; Capacitance measurement; Current measurement; MOSFET circuits; Memory; Statistics; System testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
  • Conference_Location
    Toulouse
  • Type

    conf

  • Filename
    5469080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517037