A C-MOS/SOS Technology for Radiation Tolerant Devices

Author

Pinel, J. ; Charlot, J.M. ; Suat, J.P. ; Borel, J.

fYear

1976

fDate

21-24 Sept. 1976

Firstpage

78

Lastpage

79

Abstract

The complementary MOS structure advantages for space and/or military applications are well known. The important qualities of these structures are low standby power, high immunity and insensitivity to power supply voltage. More, under transient ionizing radiation the complementary structure offers a partial inherent compensation of the photo- currents at the output. The SOS (Silicon on Sapphire) technology appears as the best technology for solving this problem. A test vehicle was constructed with the C-MOS/SOS technology developed at LETI, to evaluate the level of ionizing radiation tolerance. It includes 2-P channel and 2-N channel transistors, 3 inverters, 3 ring oscillators (25 stages) and 2-4-8 divider (Fig. 1).

Keywords

CMOS integrated circuits; invertors; silicon-on-insulator; 2N channel transistors; 2P channel transistors; CMOS-SOS technology; complementary MOS structure; divider; inverters; power supply voltage; radiation tolerant devices; ring oscillators; silicon on sapphire technology; transient ionizing radiation tolerance; Degradation; Dielectric thin films; Inverters; Ionizing radiation; Isolation technology; MOSFETs; Photoconductivity; Silicon; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European

Conference_Location

Toulouse

Type

conf

Filename

5469085