• DocumentCode
    517046
  • Title

    N-channel-Silicongate-Technology for LSI-Applications

  • Author

    Dangel, J. ; Langheinrich, W. ; Stein, E. ; Stürmer, A.

  • Author_Institution
    Forschungsinst., AEG-TELEFUNKEN, Ulm, Germany
  • fYear
    1976
  • fDate
    21-24 Sept. 1976
  • Firstpage
    71
  • Lastpage
    71
  • Abstract
    When a new LSI-circuit is to be designed, starting from the specifications first a technoIogical process for realization has to be chosen, the parameters entering into the process must be determined and guidelines for the circuit design have to be given. Last not least the technological process must be established. The circuit under consideration is a 4 k bit RAM with a 12 V power supply voltage.
  • Keywords
    MOS memory circuits; integrated circuit design; large scale integration; random-access storage; LSI-circuit design; N-channel silicon gate technology; RAM; power supply voltage; technological process; voltage 12 V; Circuit synthesis; Doping; Driver circuits; Integrated circuit interconnections; Inverters; Large scale integration; Oxidation; Power supplies; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
  • Conference_Location
    Toulouse
  • Type

    conf

  • Filename
    5469089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517046