Title :
Schottky I2L (Substrate Fed Logic) - An Optimum Form of I2L
Author :
Walsh, P.S. ; Sumerling, G.W.
Author_Institution :
Allen Clark Res. Centre, Plessey Co. Ltd., Towcester, UK
Abstract :
An advanced form of I2L, Schottky I2L, has been designed. Minimum delays ~10 ns at 50 pW and very high packing densities are attainable. Initial yield evaluation suggests that 1000 gate structures should be readily achieved.
Keywords :
Schottky diodes; delay circuits; logic design; logic gates; Schottky I2L design; gate structures; power 50 muW; substrate fed logic; very high packing density; Boron; Delay; Doping; Electrons; Epitaxial layers; Implants; Logic; Resists; Schottky diodes; Substrates;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
