• DocumentCode
    517101
  • Title

    A 16M Bit 125MHz Cached DRAM

  • Author

    Blankenship, Dennis ; Randolph, Bill ; Fukuda, Hiroyuki ; King, Dave ; Taghavi, Mohammad ; Doguchi, Tomonori ; Cassada, Rhonda ; Isom, Melvin ; Walker, Robert ; Lao, Tim ; Mann, Steve

  • Author_Institution
    Mitsubishi Semiconductor America, Inc. Durham, NC USA
  • fYear
    1995
  • fDate
    19-21 Sept. 1995
  • Firstpage
    402
  • Lastpage
    405
  • Abstract
    The Cached DRAM (CDRAM) is a synchronous memory device that can deliver I/O bandwidth and performance necessary for today´s high-speed computer systems. Independent address and control circuitry for the integrated DRAM and SRAM give the CDRAM the same flexibility as an L2 caching system with much lower cost and power usage. An internal 128 bit data bus enables the CDRAM to utilize a small SRAM cache and still obtain high cache hit rates. The smaller cache has the dual benefits of reducing chip cost and producing faster cache access times. Finally, the CDRAM supports LVTTL (Low Voltage TTL) I/O interfaces and burst mode operations, thus making it easily adaptable to most computer systems.
  • Keywords
    Bandwidth; Clocks; Control systems; Costs; Flexible printed circuits; Frequency; High performance computing; Low voltage; Pins; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
  • Conference_Location
    Lille, France
  • Print_ISBN
    2-86332-180-3
  • Type

    conf

  • Filename
    5469207