DocumentCode :
517101
Title :
A 16M Bit 125MHz Cached DRAM
Author :
Blankenship, Dennis ; Randolph, Bill ; Fukuda, Hiroyuki ; King, Dave ; Taghavi, Mohammad ; Doguchi, Tomonori ; Cassada, Rhonda ; Isom, Melvin ; Walker, Robert ; Lao, Tim ; Mann, Steve
Author_Institution :
Mitsubishi Semiconductor America, Inc. Durham, NC USA
fYear :
1995
fDate :
19-21 Sept. 1995
Firstpage :
402
Lastpage :
405
Abstract :
The Cached DRAM (CDRAM) is a synchronous memory device that can deliver I/O bandwidth and performance necessary for today´s high-speed computer systems. Independent address and control circuitry for the integrated DRAM and SRAM give the CDRAM the same flexibility as an L2 caching system with much lower cost and power usage. An internal 128 bit data bus enables the CDRAM to utilize a small SRAM cache and still obtain high cache hit rates. The smaller cache has the dual benefits of reducing chip cost and producing faster cache access times. Finally, the CDRAM supports LVTTL (Low Voltage TTL) I/O interfaces and burst mode operations, thus making it easily adaptable to most computer systems.
Keywords :
Bandwidth; Clocks; Control systems; Costs; Flexible printed circuits; Frequency; High performance computing; Low voltage; Pins; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location :
Lille, France
Print_ISBN :
2-86332-180-3
Type :
conf
Filename :
5469207
Link To Document :
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