DocumentCode
517101
Title
A 16M Bit 125MHz Cached DRAM
Author
Blankenship, Dennis ; Randolph, Bill ; Fukuda, Hiroyuki ; King, Dave ; Taghavi, Mohammad ; Doguchi, Tomonori ; Cassada, Rhonda ; Isom, Melvin ; Walker, Robert ; Lao, Tim ; Mann, Steve
Author_Institution
Mitsubishi Semiconductor America, Inc. Durham, NC USA
fYear
1995
fDate
19-21 Sept. 1995
Firstpage
402
Lastpage
405
Abstract
The Cached DRAM (CDRAM) is a synchronous memory device that can deliver I/O bandwidth and performance necessary for today´s high-speed computer systems. Independent address and control circuitry for the integrated DRAM and SRAM give the CDRAM the same flexibility as an L2 caching system with much lower cost and power usage. An internal 128 bit data bus enables the CDRAM to utilize a small SRAM cache and still obtain high cache hit rates. The smaller cache has the dual benefits of reducing chip cost and producing faster cache access times. Finally, the CDRAM supports LVTTL (Low Voltage TTL) I/O interfaces and burst mode operations, thus making it easily adaptable to most computer systems.
Keywords
Bandwidth; Clocks; Control systems; Costs; Flexible printed circuits; Frequency; High performance computing; Low voltage; Pins; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location
Lille, France
Print_ISBN
2-86332-180-3
Type
conf
Filename
5469207
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