• DocumentCode
    517110
  • Title

    1024-Bit Fully Decoded MNOS Non-Volatile Memory

  • Author

    Bostock, D.

  • Author_Institution
    Allen Clark Res. Centre, Plessey Co. Ltd., Towcester, UK
  • fYear
    1976
  • fDate
    21-24 Sept. 1976
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    A 1024-bit fully decoded MNOS memory is described which is fabricated using silicon-on-sapphire technology to provide the required isolation between the MNOS memory array and the decoding circuitry.
  • Keywords
    MIS structures; random-access storage; silicon-on-insulator; MNOS memory array; decoding circuitry; fully decoded MNOS non volatile memory; silicon on sapphire technology; Bidirectional control; Circuits; Control systems; Decoding; Isolation technology; MOSFETs; Nonvolatile memory; Registers; Threshold voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
  • Conference_Location
    Toulouse
  • Type

    conf

  • Filename
    5469232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517110