Title :
1024-Bit Fully Decoded MNOS Non-Volatile Memory
Author_Institution :
Allen Clark Res. Centre, Plessey Co. Ltd., Towcester, UK
Abstract :
A 1024-bit fully decoded MNOS memory is described which is fabricated using silicon-on-sapphire technology to provide the required isolation between the MNOS memory array and the decoding circuitry.
Keywords :
MIS structures; random-access storage; silicon-on-insulator; MNOS memory array; decoding circuitry; fully decoded MNOS non volatile memory; silicon on sapphire technology; Bidirectional control; Circuits; Control systems; Decoding; Isolation technology; MOSFETs; Nonvolatile memory; Registers; Threshold voltage; Writing;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
