• DocumentCode
    517115
  • Title

    Simple Al-Gate-Technology Yields High Bit-Density

  • Author

    Meusburger, Günther ; Keller, Hermann

  • Author_Institution
    SIEMENS AG, Munich, Germany
  • fYear
    1976
  • fDate
    21-24 Sept. 1976
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    A single-transistor memory cell in n-channel-Al-gate technology with 2.5 μm design rules will be described. Due to a novel design feature a bit density of 5720 bit/mm has been achieved.
  • Keywords
    memory architecture; transistor circuits; high bit-density; n-channel-Al-gate technology; simple AL-gate-technology; single-transistor memory cell; size 2.5 mum; Capacitance; Capacitors; Circuits; Electrodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
  • Conference_Location
    Toulouse
  • Type

    conf

  • Filename
    5469237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517115