• DocumentCode
    517128
  • Title

    High Density Monolithic Bipolar and MOS Crosspoint Arrays for Private Branch Telephone Exchanges

  • Author

    Bächle, E. ; Clauss, H. ; Dangel, J. ; Kohlbacher, G. ; Schluter, K. ; Schübler, K. ; Wulf, H.-J.

  • Author_Institution
    Forschungsinst., AEG-TELEFUNKEN, Ulm, Germany
  • fYear
    1976
  • fDate
    21-24 Sept. 1976
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    The introduction of an N-channel silicon-gate process and an I2L process has significantly improved existing monolithic semiconductor crosspoint arrays with respect to the ON resistance, the OFF attenuation, and the required chip area.
  • Keywords
    MOSFET; integrated injection logic; private telephone exchanges; I2L process; MOS crosspoint arrays; N-channel silicon-gate process; high density monolithic bipolar arrays; monolithic semiconductor crosspoint arrays; off attenuation; on resistance; private branch telephone exchanges; Attenuation; Circuit testing; Electrical resistance measurement; Integrated circuit measurements; Integrated circuit technology; MOSFET circuits; Semiconductor device measurement; Size control; Switches; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
  • Conference_Location
    Toulouse
  • Type

    conf

  • Filename
    5469250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517128