DocumentCode
517131
Title
Advanced MOSFET technologies: A review
Author
Borel, J.
Author_Institution
CENG/LETI/MEA
fYear
1976
fDate
21-24 Sept. 1976
Abstract
One of the main reasons for developing MOSFET technologies in the sixties has been the relative simplicity of the process leading to a lower cost per gate and allowing entrance to the medium scale level of integration (MSI). The first technology to enter high volume production has been the aluminium gate P channel MOSFET technology followed by the silicon gate process..
Keywords
MOSFET; MSI; aluminium gate P channel MOSFET technology; silicon gate process; Aluminum; Costs; Integrated circuit technology; Ion implantation; Large-scale systems; MOSFET circuits; Parasitic capacitance; Production; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location
Toulouse
Type
conf
Filename
5469254
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