Translinear sin(x)-circuit in MOS technology using the back gate

Author

Mulder, J. ; van der Woerd, A.C. ; Serdijn, W.A. ; van Roermund, A.H.M.

Author_Institution

Electronics Research Laboratory, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands. Tel.: +31 15 78 11 83, Fax: +31 15 78 59 22, E-mail: j.mulder@et.tudelft.nl

fYear

1995

fDate

19-21 Sept. 1995

Firstpage

82

Lastpage

85

Abstract

Though the MOS transistor is a four-terminal device, it is most often regarded as being a three-terminal device. Therefore, many possible MOS circuits are overlooked. In this paper, the four-terminal point of view is elaborated with respect to MOS weak inversion translinear circuits. It is shown that, by using the back gate, translinear networks can be derived which cannot be realized with bipolar transistors. These networks increase the possibilities offered by translinear technology. A sin(x)-circuit, which is one of the possible applications of the new network, was measured. The circuit can operate at supply voltages of less than 2 V and with a total bias current of only 14 nA.

Keywords

Bipolar transistors; Circuit topology; Differential equations; Intrusion detection; Laboratories; MOS devices; MOSFETs; Network topology; Region 2; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European

Conference_Location

Lille, France

Print_ISBN

2-86332-180-3

Type

conf

Filename

5469323