DocumentCode
517205
Title
MESFET Subnanosecond Integrated Gate for LSI Circuits
Author
Arnodo, C. ; Nuzillat, G. ; Puron, J P
fYear
1975
fDate
2-5 Sept. 1975
Firstpage
110
Lastpage
110
Keywords
Doping profiles; Electron beams; Energy consumption; Geometry; Integrated circuit technology; Ion implantation; Large scale integration; MESFET integrated circuits; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference (ESSCIRC), 1975 First European
Conference_Location
Canterbury, UK
Print_ISBN
0-85296-149-9
Type
conf
Filename
5469340
Link To Document