• DocumentCode
    517270
  • Title

    GaInP/GaAs HBT Laser Driver Circuit

  • Author

    Menouni, M. ; Desrousseaux, P. ; Launay, P. ; Martin, D. ; Driad, R. ; Dangla, J.

  • Author_Institution
    FRANCE TELECOM, CNET-PAB, Laboratoire de Bagneux, 196, Avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France. Tel: (33) 1 42 31 79 86, FAX: (33) 1 47 46 04 17
  • fYear
    1995
  • fDate
    19-21 Sept. 1995
  • Firstpage
    342
  • Lastpage
    345
  • Abstract
    A high performance driver circuit for direct laser modulation has been fabricated with a 50 GHz baseline HBT GaInP/GaAs technology. It can operate at bit rate up to 16 Gbit/s with a 40 mA modulation current and 800 mW power dissipation. We also show that correctly sizing transistor area is a key factor for obtaining higher bit rate.
  • Keywords
    Bandwidth; Bit rate; Broadband amplifiers; Current density; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Laser feedback; Power dissipation; Telecommunications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
  • Conference_Location
    Lille, France
  • Print_ISBN
    2-86332-180-3
  • Type

    conf

  • Filename
    5469406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517270