• DocumentCode
    5179
  • Title

    A Sub- {boldsymbol kT}/boldsymbol q Voltage Reference Operating at 150 mV

  • Author

    Albano, Domenico ; Crupi, Felice ; Cucchi, Francesca ; Iannaccone, Giuseppe

  • Author_Institution
    Dipt. di Ing. Inf., Modellistica, Elettron. e Sist., Univ. della Calabria, Rende, Italy
  • Volume
    23
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    1547
  • Lastpage
    1551
  • Abstract
    We propose a subthreshold CMOS voltage reference operating with a minimum supply voltage of only 150 mV, which is three times lower than the minimum value presently reported in the literature. The generated reference voltage is only 17.69 mV. This result has been achieved by introducing a temperature compensation technique that does not require the drain-source voltage of each MOSFET to be larger than 4kT/q. The implemented solution consists in two transistors voltage reference with two MOSFETs of the same threshold-type and exploits the dependence of the threshold voltage on transistor size. Measurements performed over a large sample population of 60 chips from two separate batches show a standard deviation of only 0.29 mV. The mean variation of the reference voltage for VDD ranging from 0.15 to 1.8 V is 359.5 μV/V, whereas the mean variation of VREF in the temperature range from 0 °C to 120 °C is 26.74 μV/°C. The mean power consumption at 25 °C for VDD = 0.15 V is 26.1 pW. The occupied area is 1200 μm2.
  • Keywords
    CMOS integrated circuits; MOSFET; CMOS voltage reference; MOSFET; drain-source voltage; power 26.1 pW; temperature 0 C to 120 C; temperature compensation technique; transistors; voltage 0.15 V to 1.8 V; voltage 0.29 mV; voltage 150 mV; voltage 17.69 mV; MOSFET; Power demand; Standards; Temperature measurement; Threshold voltage; Voltage measurement; Low-power design; low-voltage design; subthreshold circuits; voltage reference;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2340576
  • Filename
    6868311