DocumentCode
5179
Title
A Sub-
Voltage Reference Operating at 150 mV
Author
Albano, Domenico ; Crupi, Felice ; Cucchi, Francesca ; Iannaccone, Giuseppe
Author_Institution
Dipt. di Ing. Inf., Modellistica, Elettron. e Sist., Univ. della Calabria, Rende, Italy
Volume
23
Issue
8
fYear
2015
fDate
Aug. 2015
Firstpage
1547
Lastpage
1551
Abstract
We propose a subthreshold CMOS voltage reference operating with a minimum supply voltage of only 150 mV, which is three times lower than the minimum value presently reported in the literature. The generated reference voltage is only 17.69 mV. This result has been achieved by introducing a temperature compensation technique that does not require the drain-source voltage of each MOSFET to be larger than 4kT/q. The implemented solution consists in two transistors voltage reference with two MOSFETs of the same threshold-type and exploits the dependence of the threshold voltage on transistor size. Measurements performed over a large sample population of 60 chips from two separate batches show a standard deviation of only 0.29 mV. The mean variation of the reference voltage for VDD ranging from 0.15 to 1.8 V is 359.5 μV/V, whereas the mean variation of VREF in the temperature range from 0 °C to 120 °C is 26.74 μV/°C. The mean power consumption at 25 °C for VDD = 0.15 V is 26.1 pW. The occupied area is 1200 μm2.
Keywords
CMOS integrated circuits; MOSFET; CMOS voltage reference; MOSFET; drain-source voltage; power 26.1 pW; temperature 0 C to 120 C; temperature compensation technique; transistors; voltage 0.15 V to 1.8 V; voltage 0.29 mV; voltage 150 mV; voltage 17.69 mV; MOSFET; Power demand; Standards; Temperature measurement; Threshold voltage; Voltage measurement; Low-power design; low-voltage design; subthreshold circuits; voltage reference;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2014.2340576
Filename
6868311
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