DocumentCode :
518266
Title :
Modeling the mid-infrared thermal radiative properties of silicon complex gratings
Author :
Wang, Aihua ; Cai, Jiuju ; Chen, Yubin
Author_Institution :
SEPA Key Lab. on Eco-Ind., Northeastern Univ., Shenyang, China
Volume :
5
fYear :
2010
fDate :
16-18 April 2010
Abstract :
A finite-difference time-domain numerical scheme was used to model the infrared radiative properties of heavily doped silicon simple and complex gratings. High absorptance from heavily doped silicon for the transverse magnetic wave incidence can be achieved with one-dimensional periodic gratings. For simple binary gratings, the associated absorptance peak is narrowband. The drawback can be remedied by using complex gratings. The spectral absorptance displays a peak with a much bigger full-width-at-half-maximum FWHM . The broadband absorptance peak can be attributed to the excitation of surface plasmon polaritons based on the electromagnetic fields and Poynting vectors plots. It demonstrates that the complex gratings may significantly enhance the performance of infrared detectors.
Keywords :
diffraction gratings; elemental semiconductors; finite difference time-domain analysis; light absorption; periodic structures; polaritons; surface plasmons; 1D periodic gratings; Poynting vectors; Si; broadband spectral absorptance; electromagnetic fields; finite-difference time-domain numerical scheme; full-width-at-half-maximum; heavily doped silicon complex gratings; infrared detectors; midinfrared thermal radiative properties; narrowband spectral absorptance; simple binary gratings; surface plasmon polaritons; transverse magnetic wave incidence; Displays; Finite difference methods; Gratings; Infrared detectors; Magnetosphere; Mechanical factors; Optical surface waves; Plasmons; Silicon; Time domain analysis; Finite difference time domain method; complex gratings; surface plasmon polaritons; thermal radiative properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Engineering and Technology (ICCET), 2010 2nd International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-6347-3
Type :
conf
DOI :
10.1109/ICCET.2010.5485943
Filename :
5485943
Link To Document :
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