• DocumentCode
    518266
  • Title

    Modeling the mid-infrared thermal radiative properties of silicon complex gratings

  • Author

    Wang, Aihua ; Cai, Jiuju ; Chen, Yubin

  • Author_Institution
    SEPA Key Lab. on Eco-Ind., Northeastern Univ., Shenyang, China
  • Volume
    5
  • fYear
    2010
  • fDate
    16-18 April 2010
  • Abstract
    A finite-difference time-domain numerical scheme was used to model the infrared radiative properties of heavily doped silicon simple and complex gratings. High absorptance from heavily doped silicon for the transverse magnetic wave incidence can be achieved with one-dimensional periodic gratings. For simple binary gratings, the associated absorptance peak is narrowband. The drawback can be remedied by using complex gratings. The spectral absorptance displays a peak with a much bigger full-width-at-half-maximum FWHM . The broadband absorptance peak can be attributed to the excitation of surface plasmon polaritons based on the electromagnetic fields and Poynting vectors plots. It demonstrates that the complex gratings may significantly enhance the performance of infrared detectors.
  • Keywords
    diffraction gratings; elemental semiconductors; finite difference time-domain analysis; light absorption; periodic structures; polaritons; surface plasmons; 1D periodic gratings; Poynting vectors; Si; broadband spectral absorptance; electromagnetic fields; finite-difference time-domain numerical scheme; full-width-at-half-maximum; heavily doped silicon complex gratings; infrared detectors; midinfrared thermal radiative properties; narrowband spectral absorptance; simple binary gratings; surface plasmon polaritons; transverse magnetic wave incidence; Displays; Finite difference methods; Gratings; Infrared detectors; Magnetosphere; Mechanical factors; Optical surface waves; Plasmons; Silicon; Time domain analysis; Finite difference time domain method; complex gratings; surface plasmon polaritons; thermal radiative properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Engineering and Technology (ICCET), 2010 2nd International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-6347-3
  • Type

    conf

  • DOI
    10.1109/ICCET.2010.5485943
  • Filename
    5485943