Low-temperature bonding for microdevices

Author

Wang, Ying-Hui ; Lu, Jian ; Suga, Tadatomo

Author_Institution

Sch. of Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2010

fDate

5-7 May 2010

Firstpage

358

Lastpage

361

Abstract

A low-temperature bonding process for packaging surface acoustic wave (SAW) and lead zirconate titanate (PZT) microdevices was developed by the surface activated bonding (SAB) method from room temperature to 100°C. An intermediate gold layer was used in the bonding. The required bonding pressure was optimized. To compare this method with conventional thermocompression bonding and thermosonic bonding methods, die shear and electrical tests were performed to determine the mechanical and electrical properties, respectively. The bonded microdevices show high bonding strength and the proper signal output. Scanning electron microscopy and energy dispersive X-ray spectrometry observations showed that no intermetallic compound formed around the bond interfaces.

Keywords

X-ray chemical analysis; bonding processes; lead compounds; micromechanical devices; scanning electron microscopy; surface acoustic wave devices; zirconium compounds; die shear; electrical properties; electrical tests; energy dispersive X-ray spectrometry; intermetallic compound; lead zirconate titanate microdevices packaging; low-temperature bonding; mechanical properties; scanning electron microscopy; surface acoustic wave packaging; surface activated bonding method; temperature 100 C; thermocompression bonding; thermosonic bonding; Acoustic waves; Bonding processes; Gold; Mechanical factors; Packaging; Performance evaluation; Surface acoustic waves; Temperature; Testing; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Test Integration and Packaging of MEMS/MOEMS (DTIP), 2010 Symposium on

Conference_Location

Seville

Print_ISBN

978-1-4244-6636-8

Electronic_ISBN

978-2-35500-011-9

Type

conf

Filename

5486520