A high-efficiency cross-coupled charge pump for flash memories

This paper presents a new cross-coupled charge pump structure which generates 2Vdd output and applies to flash memory. Compared with conventional structures, the novel scheme has lower ripple voltage, and higher efficiency. These advantages were achieved by employing the methods of reducing power loss effectively. The proposed charge pump was fabricated with TSMC 0.18 μm CMOS process. By the simulation of HSPICE, it shows that the new scheme could operate at a supply voltage as low as 0.9 V with the maximum efficiency of 91.82%.