Title :
The stochastic based model of monolithic active inductor
Author :
Banchuin, R. ; Chaisricharoen, R.
Author_Institution :
Dept. of Comput. Eng., Siam Univ., Bangkok, Thailand
Abstract :
In this research, the model which describes the stochastic effect of the bias current to the inductance of the monolithic active inductor has been proposed. The model can accurately capture the stochastic behavior of the resulting inductance with sufficient confidence. This research has been performed based upon the up to dated CMOS technology. The proposed model is applicable to any CMOS monolithic active inductor. Hence, it has been found to be a convenience tool for the design of various active inductor based applications.
Keywords :
CMOS integrated circuits; inductance; inductors; stochastic processes; CMOS monolithic active inductor; CMOS technology; bias current; inductance; stochastic behavior; stochastic effect; various active inductor; Active inductors; CMOS technology; Filters; Inductance; Oscillators; Random processes; Semiconductor device modeling; Stochastic processes; Testing; Tuning;
Conference_Titel :
Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010 International Conference on
Conference_Location :
Chaing Mai
Print_ISBN :
978-1-4244-5606-2
Electronic_ISBN :
978-1-4244-5607-9
